ZnO is a wide direct-gap semiconductor with a hexagonal crystal structure of wurtzite. ZnO是一种具有纤锌矿晶体结构的直接宽带隙半导体材料。
GaN is wide band gap and direct-gap semiconductor material. It is broadly applied in the area of semiconductor devices. GaN是一种宽禁带直接带隙半导体材料,在电子器件领域有着广泛的应用。
ZnO is a novel wide direct-gap semiconductor. It has great uses in information age. ZnO是一种新型的直接带隙的宽禁带半导体材料,在信息领域有着重要的应用。